SI8902EDB [VISHAY]
Bi-Directional N-Channel 20-V (D-S) MOSFET; 双向N通道20 -V （D -S ）的MOSFET
| 元器件型号： | SI8902EDB |
| 生产厂家： | 
VISHAY TELEFUNKEN
|
| 描述和应用： | Bi-Directional N-Channel 20-V (D-S) MOSFET |
| PDF文件： | 总4页 (文件大小：193K) |
| 下载文档： | 下载PDF数据表文档文件 |
| 型号参数：SI8902EDB参数 | |
| 是否无铅 | 含铅 |
| 是否Rohs认证 | 不符合 |
| 生命周期 | Transferred |
| IHS 制造商 | SILICONIX INC |
| 零件包装代码 | CSP |
| 包装说明 | , |
| 针数 | 6 |
| Reach Compliance Code | unknown |
| 风险等级 | 5.27 |
| Is Samacsys | N |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR |
| JESD-609代码 | e0 |
| 工作模式 | ENHANCEMENT MODE |
| 最高工作温度 | 150 °C |
| 极性/信道类型 | N-CHANNEL |
| 最大功率耗散 (Abs) | 1.7 W |
| 子类别 | FET General Purpose Power |
| 表面贴装 | YES |
| 端子面层 | Tin/Lead (Sn/Pb) |
| Base Number Matches | 1 |
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